memory cell
英 [ˈmeməri sel]
美 [ˈmeməri sel]
记忆细胞；存储单元；存储元件；存贮单元
双语例句
- Single aluminum memory cell
单层铝金属化式存储单元 - A memory capable of preventing a memory cell from disappearance of data resulting from accumulated disturbances is obtained.
由此，可以得到能够抑制由积累的干扰而导致的存储器单元的数据消失的存储器。 - In a memory cell array, a plurality of memory cells having ferroelectric capacitors amplifies the potential of the bit lines of each memory cell.
半导体存储装置。在存储单元阵列中设置具有铁电电容器的多个存储单元。多个检测放大器电路使各存储单元的位线的电位放大。 - Memory cell capacitance is the crucial parameter which determines the sensing signal voltage, speed, data retention times, endurance and against the soft error event.
记忆体电容是决定检测讯号电压、速度、资料保存时间、耐久性以及防止软性误差的重要参数。 - Conceptual Design with a Molecular Dynamics Simulation of the Performance Characteristics of a Nonvolatile Molecular Memory Cell Operating in a Room-Temperature Environment
室温下工作的非易失性分子级存储单元的操作设计与分子动力学模拟 - The invention provides a memory device arranged on a substrate ( 401) and having at least one memory cell ( 100).
一种存储器件布置在基板（401）上并具有至少一个存储单元（100）。 - In this thesis, the multi-bit nonvolatile memory cell with Ge nanocrystals as the charge trapping nodes has been fabricated and demonstrated.
本论文的主题是研制以锗奈米晶粒当作电荷储存点的多位元密度非挥发性记忆体单胞元。 - This memory comprises a nonvolatile memory cell and a refresh portion for rewriting data in the memory cell.
该存储器备有：非易失性的存储器单元和对存储器单元进行重新写入用的更新部。 - Novel Design of Switched-Current Memory Cell with High Performance
一种新型高性能开关电流存储单元的设计 - A transistor memory cell can be made with any number of terminals. We sometimes keep our consignments in bond under the control of the customs.
晶体管存贮单元端点的数量是不受限制的。我们有时把货物贮存在关栈中，由海关监管。 - The refresh portion reads and rewrites data from and in the memory cell in a power-down state.
而且，更新部在电源下降时对存储器单元进行读出及重新写入。 - AIRS results in the memory cell pool after it is trained and classifies the original antigens by KNN.
AIRS通过训练产生记忆细胞池，利用最近邻原理对原始抗原分类。 - What sequence of events do you think would be required to move the contents of one memory cell in a computer to another memory cell?
你认为要搬移某记忆体单元的内容至另一记忆体单元需要哪些一连串的事件来完成？ - Its memory cell survival time is longer.
其记忆细胞存活的时间则更长。 - The matched multi-bit word is read out of storage and represents the stored bits in the single non-volatile memory cell.
匹配的多位字被读出存储器，并且表示该单个非易失性存储单元中存储的位。 - Whether different levels of memory cell will affect the outcome of disseminated tumor cells is still under investigation.
骨髓播散肿瘤细胞转变成为大体转移的患者，是否与其记忆T细胞水平低下相关需作进一步研究。 - Then the memory cell's size is designed by SNM simulation.
之后，通过仿真存储单元的噪声容限设计了SRAM六管存储单元的尺寸。 - The memory cell keeps better antibodies of the antibody population.
记忆单元保存抗体群中亲和力较高的抗体。 - The embedded SRAM performance model, structure optimization and memory cell device dimension optimization are studied in this article.
本文针对嵌入式SRAM性能模型、结构优化和存储单元尺寸优化进行了深入研究。 - At the same time, a memory cell dynamic demotion mechanism and relevant arithmetic are put forward to ensure the system to check multiform nonself.
同时模型还针对计算机免疫系统中非自体的多样性和广泛性，提出了对记忆细胞的动态降职机制，并给出了记忆细胞动态降职算法。 - In between, author suggests a new method of plug-in intermediate memory cell& displacement signal condition interval method.
其中提出了一种插入中间记忆元件的新法&行程信号状态区间法。 - Analysis and Design of Memory Cell of Asynchronous FIFO
异步FIFO中存储单元的分析设计 - A single poly non-volatile memory cell structure implemented in a standard CMOS process is developed.
这里提出了一个基于标准CMOS工艺的单层多晶硅的非易失性存储器。 - After detailed introduction and analysis of several mature basic memory cells including the traditional six-transistor cell in the development process of SRAM, this paper proposes a low power nine-transistor memory cell which works in the sub-threshold region.
在对SRAM发展至今包括传统六管单元在内的几款比较成熟的基本存储单元做了详细的介绍和分析之后，提出了本论文设计的亚阈值低功耗九管存储单元。 - The memory array consists of double ended read/ write memory cell.
存储阵列由具有采用双位线读，双位线写的存储单元构成。 - To improve its reliability, each memory cell is designed to have double floating gates to store information data.
为了提高数据存储的可靠性，存储单元采用了双浮栅存储节点结构。 - Based on the physical mechanism of data remanence, a novel memory cell is proposed which can effectively inhibit data remanence.
本文分析了六管SRAM数据残留的物理机理，并基于此设计了一个可有效抑制数据残留的存储单元。 - The buffer with the advantages of simple structure and low cost can achieve the storage, duplication and extract of light, and can be used for memory cell and pulse retiming.
该缓存器可以实现信号的缓存、复制和提取，并能应用于记忆胞和脉冲定时，具有结构简单、成本低廉等优点。 - System hardware design includes: control unit design, the synchronization signal unit design, memory cell design and power design.
系统硬件设计包括：控制单元的设计、同步信号发生单元的设计、存储单元的设计和电源设计。 - Research the Rose Bengal memory cell which is based on the Al/ ITO electrodes.
研究了基于铝/氧化铟锡电极的虎红分子存储单元产生双稳态现象的原因。